Influence of film stress and thermal oxidation on the generation of dislocations in silicon

Applied Physics Letters

Volumn 33, Issue 10, 1978, Pages 895-897

  Bohg, A ^a,b   Gaind, A K ^a  

^a IBM   (United States)

^b IBM   (Germany)

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EID: 0013228038     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.90207     Document Type: Article

References (10)