The Effect of Oxide Charges at LOCOS Isolation Edges on Oxide Breakdown

IEEE Transactions on Electron Devices

Volumn 40, Issue 10, 1993, Pages 1818-1822

  Uchida, Hidetsugu ^a   Hirashita, Norio ^a   Ajioka, Tsuneo ^a  

^a OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CHARGE CARRIERS; DEFECTS; DIELECTRIC PROPERTIES; ELECTRIC BREAKDOWN; ELECTRONS; GATES (TRANSISTOR); LEAKAGE CURRENTS; OXIDES; RELIABILITY; STRESSES; VLSI CIRCUITS;

LOCOS ISOLATION EDGES; OXIDE BREAKDOWN; OXIDE CHARGES EFFECT; TIME DEPENDENT DIELECTRIC BREAKDOWN TESTS;

MOS DEVICES;

EID: 0027680811     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.277339     Document Type: Article

References (11)

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