Metal impurity trapping effect by stress at edges of local oxidation of silicon structure

Japanese Journal of Applied Physics

Volumn 33, Issue 4R, 1994, Pages 1728-1734

  Ishigami, Shun ichiro ^a   Ishii, Satoru ^a   Shinyashiki, Hiroshi ^a   Furuya, Hisashi ^a   Shingyouji, Takayuki ^a  

^a MITSUBISHI MATERIALS CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AGGLOMERATION; ANNEALING; ATOMS; DISLOCATIONS (CRYSTALS); FLUORESCENCE; IRON; SILICON; SPECTROSCOPY; STRESSES; STRUCTURE (COMPOSITION); TRANSMISSION ELECTRON MICROSCOPY;

DISLOCATION LOOP; LOCAL OXIDATION OF SILICON EDGES; METAL IMPURITY TRAPPING EFFECT; OPTICAL MICROSCOPY; SECONDARY ION MASS SPECTROSCOPY; SPIN COAT; TOTAL REFLECTION X RAY FLUORESCENCE; TRAPPING;

OXIDATION;

EID: 0028422007     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.33.1728     Document Type: Article

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