The use of charge pumping currents to measure surface state densities in MOS transistors

Solid State Electronics

Volumn 19, Issue 3, 1976, Pages 241-247

  Elliot, Alexander B M ^a  

^a Post Office Research Department Martlesham Heath ^*  (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS;

SEMICONDUCTOR DEVICES, MIS;

EID: 0016927294     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(76)90169-6     Document Type: Article

References (18)

1. Use of tests at elevated temperatures to accelerate the life of an m.o.s. integrated circuit
2. The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique
3. Charge pumping in MOS devices
4. Surface states at steam-grown silicon-silicon dioxide interfaces
5. M.O.S.T. channel-length measurement
6. Temperature coefficient of resistance of annealed and agglomerated silver films