Direct Tunneling Memory (DTM) utilizing novel floating gate structure

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 922-924

  Horiguchi, N ^a   Usuki, T ^a   Goto, K ^a   Futatsugi, T ^a   Sugii, T ^a   Yokoyama, N ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DRY ETCHING; ELECTRIC POTENTIAL; ELECTRON BEAM LITHOGRAPHY; ELECTRON TUNNELING; GATES (TRANSISTOR); ION IMPLANTATION; LEAKAGE CURRENTS; OXIDES; SEMICONDUCTING SILICON COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

CONTROL GATE; DIRECT TUNNELING MEMORY; FLOATING GATE MEMORY; LEAKAGE STOP BARRIER; RETENTION TIME; SOURCE AND DRAIN; ULTRA THIN TUNNEL OXIDE;

DATA STORAGE EQUIPMENT;

EID: 0033345389     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)