Structure of GaN films grown by molecular beam epitaxy on (0001) sapphire

Journal of Electronic Materials

Volumn 26, Issue 3, 1997, Pages 285-289

  Romano, L T ^a   Krusor, B S ^a   Singh, R ^b   Moustakas, T D ^b  

^a PALO ALTO RESEARCH CENTER   (United States)

^b Boston University   (United States)

Author keywords

Crystal structure; GaN; Molecular beam epitaxy (MBE); Transmission electron microscopy (TEM)

Indexed keywords

EID: 0000840921     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0165-x     Document Type: Article

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