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Volumn 84, Issue 9, 1998, Pages 5369-5371

Strong interface effects in graded SiO2/Si/SiO2 quantum wells

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[No Author keywords available]

Indexed keywords


EID: 0001510956     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368818     Document Type: Article
Times cited : (8)

References (28)
  • 9
    • 0002361340 scopus 로고
    • and references therein
    • 1-xAs semiconductor quantum wells, where related interface shifts of the carrier energy levels are ∼10 meV - see, for example, M. A. Herman, D. Bimberg, and J. Christen, J. Appl. Phys. 70, R1 (1991), and references therein; E. C. Ferreira, J. A. P. da Costa, Gil A. Farias, and V. N. Freire, Superlattices Microstruct. 17, 397 (1994).
    • (1991) J. Appl. Phys. , vol.70
    • Herman, M.A.1    Bimberg, D.2    Christen, J.3
  • 10
    • 0029537420 scopus 로고
    • 1-xAs semiconductor quantum wells, where related interface shifts of the carrier energy levels are ∼10 meV - see, for example, M. A. Herman, D. Bimberg, and J. Christen, J. Appl. Phys. 70, R1 (1991), and references therein; E. C. Ferreira, J. A. P. da Costa, Gil A. Farias, and V. N. Freire, Superlattices Microstruct. 17, 397 (1994).
    • (1994) Superlattices Microstruct. , vol.17 , pp. 397
    • Ferreira, E.C.1    Da Costa, J.A.P.2    Farias, G.A.3    Freire, V.N.4
  • 12
    • 0003693693 scopus 로고    scopus 로고
    • The Electrochemical Society, Pennington NJ, and references therein
    • 2 Interface-3, edited by H. Z. Massoud, E. H. Poindexter, and C. R. Helms (The Electrochemical Society, Pennington NJ, 1996), and references therein.
    • (1996) 2 Interface-3
    • Massoud, H.Z.1    Poindexter, E.H.2    Helms, C.R.3
  • 24
    • 0001443499 scopus 로고
    • and references therein
    • T. L. Li and K. J. Kuhn, Phys, Rev. B 47, 12760 (1993), and references therein.
    • (1993) Phys, Rev. B , vol.47 , pp. 12760
    • Li, T.L.1    Kuhn, K.J.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.