Quantum confinement and interface effects on photoluminescence from silicon single quantum wells

Solid State Communications

Volumn 103, Issue 10, 1997, Pages 573-576

  Okamoto, Shinji ^a,c,d   Kanemitsu, Yoshihiko ^b,c  

^a Tokyo City Universtiy   (Japan)

^b NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

^d TOTTORI UNIVERSITY   (Japan)

Author keywords

A. nanostructures; A. quantum wells; D. optical properties; E. luminescence

Indexed keywords

INTERFACES (MATERIALS); NANOSTRUCTURED MATERIALS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SILICA; SPECTRUM ANALYSIS;

QUANTUM CONFINEMENT; SILICON SINGLE QUANTUM WELLS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0031233221     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(97)00227-5     Document Type: Article

References (18)

1. See, for example, Kanemitsu, Y., Phys. Rep., 263, 1995, 1.
2. Delerue, C., Lannoo, M. and Allan, G., Phys. Rev. Lett., 76, 1996, 3038; Hill, N.A. and Whaley, K.B., Phys. Rev. Lett., 76, 1996, 3039.
3. Delerue, C., Lannoo, M. and Allan, G., Phys. Rev. Lett., 76, 1996, 3038; Hill, N.A. and Whaley, K.B., Phys. Rev. Lett., 76, 1996, 3039.
4. Takahashi, Y., Furuta, T., Ono, Y., Ishiyama, T. and Tabe, M., Jpn. J. Appl. Phys., 34, 1995, 950.
5. Vervoort, L., Bassani, F., Mihalcescu, I., Vial, J.C. and Arbaud d'Avitaya, F., Phys. Status Solidi (b), 190, 1995, 123.
6. Lockwood, D.J., Lu, Z.H. and Baribeau, J.-M., Phys. Rev. Lett., 76, 1996, 539; Lu, Z.H., Lockwood, D.J. and Baribeau, J.-M., Nature, 378, 1995, 258.
7. Lockwood, D.J., Lu, Z.H. and Baribeau, J.-M., Phys. Rev. Lett., 76, 1996, 539; Lu, Z.H., Lockwood, D.J. and Baribeau, J.-M., Nature, 378, 1995, 258.
8. See, for example, Street, R.A., Hydrogenated Amorphous Silicon. Cambridge University Press, Cambridge, 1991.
9. Hane, M., Miyamoto, Y. and Oshiyama, A., Phys. Rev., B41, 1990, 12637.
10. Pasquarello, A., Hybertsen, M.S. and Car, R., Phys. Rev. Lett., 74, 1995, 1024.
11. Kageshima, H. and Shiraishi, K., Proc. 23rd Int. Conf. Phys. Semicond. (Edited by M. Scheffler and R. Zimmermann), p. 903. World Scientific, Singapore, 1996.
12. Takahashi, Y., Namatsu, H., Kurihara, K., Iwadate, K., Nagase, M. and Murase, K., IEEE Electron Devices, 43, 1996, 1213.
13. Kageshima, H., Surf. Sci., 357/358, 1996, 312.
14. Zhang, S.B. and Zunger, A., Appl. Phys. Lett., 63, 1993, 1399. The calculated size dependence of the band gap energy is very complicated like a tooth of a saw. The samples have the fluctuation of a few monolayers. Then, we plot the calculated values as a smooth line in the figure.
15. Kanemitsu, Y., Phys. Rev., B53, 1996, 13515.
16. Takagahara, T. and Takeda, K., Phys. Rev., B46, 1992, 15578.
17. Hybertsen, M.S., Phys. Rev. Lett., 72, 1994, 1514.
18. Feldmann, J., Peter, G., Göbel, E.O., Dawson, P., Moore, K., Foxon, C. and Elliott, R.J., Phys. Rev. Lett., 59, 1987, 2337.