Thermal oxide growth at chemical vapor deposited SiO2/Si interface during annealing evaluated by difference x-ray reflectivity

Applied Physics Letters

Volumn 71, Issue 14, 1997, Pages 1954-1956

  Awaji, Naoki ^a   Ohkubo, Satoshi ^a   Nakanishi, Toshiro ^a   Aoyama, Takayuki ^a   Sugita, Yoshihiro ^a   Takasaki, Kanetake ^a   Komiya, Satoshi ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0013411992     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119753     Document Type: Article

References (4)

1. N. Awaji, Y. Sugita, T. Nakanishi, S. Ohkubo, K. Takasaki, and S. Komiya, J. Vac. Sci. Technol. A 14, 971 (1996).
2. B. E. Deal and A. S. Grove, J. Appl. Phys. 36, 3770 (1965).
3. 2, edited by R. A. B. Devine (Plenum, New York, 1988), p. 315.
4. T. Omaneuda, H. Miki, K. Asada, T. Sugano, and Y. Ohji, Jpn. J. Appl. Phys., Part 2 30, L1993 (1991).