Improvement of GaN-based laser diode facets by FIB polishing

Electronics Letters

Volumn 34, Issue 13, 1998, Pages 1315-1316

  Mack, M P ^a   Via, G D ^b   Abare, A C ^a   Hansen, M ^a   Kozodoy, P ^a   Keller, S ^a   Speck, J S ^a   Mishra, U K ^a   Coldren, L A ^a   DenBaars, S P ^a  

^a University of California   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; ION BEAMS; LIGHT MEASUREMENT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MIRRORS; POLISHING; QUANTUM EFFICIENCY; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

FOCUSED ION BEAM (FIB) POLISHING;

SEMICONDUCTOR LASERS;

EID: 0032091901     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980886     Document Type: Article

References (5)

1. xN (0 < x ≤ 0.4) films grown on sapphire substrates by MOVPE', J. Cryst. Growth, 1989, 98, pp. 209-219
2. ORTON, J.W., and FOXON, C.T.: 'Group III nitride semiconductors for short wavelength light emitting devices', Rep. Prog. Phys., 1998, 61, pp. 1-75
3. NAKAMURA, S., and FASOL, G.: 'The blue laser diode: GaN based light emitters and lasers' (Springer, Berlin, New York, 1997)
4. MACK, M.P., ABARE, A.C., AIZCORBE, M., KOZODOY, P., KELLER, S., MISHRA, U.K., COLDREN, L.A., and DENBAARS, S.P.: 'Characteristics of indium-gallium-nitride multiple-quantum-well blue laser diodes grown by MOCVD', MRS Internet J. Nitride Semiconductor Res., 1997, 2
5. COLDREN, L.A., and CORZINE, S.W.: 'Diode lasers and photonic integrated circuits' (John Wiley & Sons, Inc., New York 1995)