Si adatom surface migration biasing by elastic strain gradients during capping of Ge or Si1-xGex hut islands

Applied Physics Letters

Volumn 73, Issue 8, 1998, Pages 1053-1055

  Kubler, L ^a   Dentel, D ^a   Bischoff, J L ^a   Ghica, C ^b   Ulhaq Bouillet, C ^b   Werckmann, J ^b  

^a UNIVERSITÉ DE HAUTE ALSACE   (France)

^b INSTITUT DE PHYSIQUE ET CHIMIE DES MATÉRIAUX DE STRASBOURG   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001671608     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122082     Document Type: Article

References (13)

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