Spectroellipsometric characterization of SIMOX with a very thin SI layer

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 2873, Issue , 1996, Pages 278-281

  Yamaguchi, T ^a   Jayatissa, A H ^a   Tonooka, S ^a   Aoyama, M ^a   Tabe, M ^a   Kanda, Y ^b  

^a SHIZUOKA UNIVERSITY   (Japan)

^b TOYO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DISTRIBUTION FUNCTIONS; LOW-K DIELECTRIC; POLARIZATION; SILICA; SILICON OXIDES; SINGLE CRYSTALS;

MODEL DIELECTRIC FUNCTIONS; SI LAYER; SINGLE CRYSTAL SILICON; SIZE EFFECTS; THICKNESS DISTRIBUTIONS; THICKNESS FLUCTUATIONS;

SILICON WAFERS;

EID: 0042192187     PISSN: 0277786X     EISSN: 1996756X     Source Type: Conference Proceeding    
DOI: 10.1117/12.246240     Document Type: Conference Paper

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