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Volumn 88, Issue 11, 2000, Pages 6388-6394

In situ single wavelength ellipsometry studies of high rate hydrogenated amorphous silicon growth using a remote expanding thermal plasma

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0001005153     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1321793     Document Type: Article
Times cited : (14)

References (41)
  • 26
    • 85037484951 scopus 로고    scopus 로고
    • note
    • -1), in which the same initial jump for a longer time scale was observed, because a plasma induced surface charge should be present within 1 ms of starting the deposition.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.