On the effect of substrate temperature on a-Si:H deposition using an expanding thermal plasma

Materials Research Society Symposium - Proceedings

Volumn 420, Issue , 1996, Pages 341-346

  Severens, R J ^a   van de Sanden, M C M ^a   Verhoeven, H J M ^a   Bastiaanssen, J ^a   Schram, D C ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CRYSTAL MICROSTRUCTURE; DEPOSITION; DESORPTION; ELECTRONIC DENSITY OF STATES; HYDROGEN; MATHEMATICAL MODELS; PLASMA APPLICATIONS; REFRACTIVE INDEX; SILANES; THERMAL EFFECTS;

AMORPHOUS HYDROGENATED SILICON; HYDROGEN ABSTRACTION; KINETIC MODEL; MATERIAL QUALITY; OPTICAL BANDGAP; PHYSISORPTION; THERMAL DESORPTION; THERMAL PLASMA;

AMORPHOUS SILICON;

EID: 0030383224     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-420-341     Document Type: Conference Paper

References (17)