STM observation on the initial growth of amorphous and microcrystalline silicon films

Materials Research Society Symposium - Proceedings

Volumn 420, Issue , 1996, Pages 413-424

  Ikuta, K ^a   Toyoshima, Y ^a   Yamasaki, S ^a   Matsuda, A ^a   Tanaka, K ^a  

^a Technology (JRCAT)   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ATOMIC FORCE MICROSCOPY; ELECTRONIC DENSITY OF STATES; GRAPHITE; HYDROGENATION; NUCLEATION; PLASMAS; RAMAN SPECTROSCOPY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SURFACE ROUGHNESS;

DENSITY OF NUCLEATION SITES; MICROCRYSTALLINE SILICON; RAMAN SCATTERING SPECTROSCOPY;

SEMICONDUCTING FILMS;

EID: 0030413937     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-420-413     Document Type: Conference Paper

References (20)