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Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 466-474

Optical and structural studies of GaN 3D structures selectively grown by MOCVD

(10) Viste, P a Colombier, I b Donatini, F b Vial, J C b Baldeck, P b Herino, R b Duc Mauge A c Godfroyd, J c Lacroute, Y a Sacilotti, M a

a UNIVERSITÉ DE BOURGOGNE (France)

b UNIV GRENOBLE ALPES (France)

c RSA Le RUBIS SA (France)

Author keywords

A1. Microstructure; A3. Metal organic chemical vapor deposition; A3. Metal organic vapor phase epitaxy; B1. Gan; B1. Metal organic; B1. Metallic structures

Indexed keywords

CATHODOLUMINESCENCE; FLUORESCENCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE;

METAL-ORGANIC; METALLIC STRUCTURES; OPTICAL VISIBLE EMISSION; TRIMETAL-GALLIUM (TMGA);

GALLIUM NITRIDE;

EID: 9944242047 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.09.002 Document Type: Conference Paper

Times cited : (4)

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