Microstructure and optical properties of GaN films on sapphire substrates

Materials and Design

Volumn 21, Issue 6, 2000, Pages 579-582

  Chen, Zhizhong ^a   Zhu, Jianming ^a   Shen, Bo ^a   Zhang, Rong ^a   Zhou, Yugang ^a   Chen, Peng ^a   Li, Weiping ^a   Liu, Wenjun ^a   Wang, Zhenlin ^a   Zheng, Youdou ^a   Jiang, Shusheng ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

Gallium nitride (GaN); Threading dislocation; Yellow luminescence; Zippers structure

Indexed keywords

CORRELATION METHODS; CRYSTAL MICROSTRUCTURE; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL FILMS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; RAMAN SCATTERING; SAPPHIRE; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

FULL WIDTH OF HALF MAXIMUM; GALLIUM NITRIDE; LIGHT RADIATION HEATING METALORGANIC CHEMICAL VAPOR DEPOSITION; THREADING DISLOCATION; YELLOW LUMINESCENCE; ZIPPERS STRUCTURE;

GALLIUM COMPOUNDS;

MICROSTRUCTURE;

EID: 6744263805     PISSN: 02641275     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0261-3069(00)00014-5     Document Type: Article

References (14)