Optical properties of novel GaN 3D structures grown by metal-organic chemical vapor deposition (MOCVD)

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 6 A, 2004, Pages

  Sacilotti, Marco ^a   Imhoff, Luc ^a   Dumas, Colette ^a   Viste, Pierre ^a   Vial, Jean Claude ^b   Baldeck, Patrice ^b   Colombier, Isabelle ^b   Donatini, Fabrice ^b  

^a UNIVERSITÉ DE BOURGOGNE   (France)

^b UNIV GRENOBLE ALPES   (France)

Author keywords

Ga metallic structures; GaN; Metal organic; Microstructure; MOCVD; MOVPE

Indexed keywords

AMMONIA; ANNEALING; GALLIUM NITRIDE; LASER PULSES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; MICROSTRUCTURE; OPTICAL MICROSCOPY; OPTICAL PROPERTIES; PHOTONS; PYROLYSIS; SEMICONDUCTOR GROWTH; SUBSTRATES;

INTENSITY EMISSION; LASER EXCITATION; METALLIC STRUCTURES; PHOTON EXCITATION;

NANOSTRUCTURED MATERIALS;

EID: 3242795801     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.43.l698     Document Type: Article

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