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Materials Research Bulletin

Volumn 37, Issue 5, 2002, Pages 841-848

Photoluminescence of GaN microcrystallites prepared by a new solvothermal process

(6) Collado, C a,b Goglio, G a Demazeau, G a,b Barriere A S c Hirsch, L c Leroux, M d

a INST CHIM MATIERE COND BORDEAUX (France)

b Ecole Nationale Superieure de Chimie et de Physique de Bordeaux (France)

c CNRS (France)

d CRHEA CNRS (France)

Author keywords

A. Nitrides; B. Crystal growth; C. High pressure; D. Optical properties

Indexed keywords

CRYSTAL GROWTH; CRYSTALLINE MATERIALS; HIGH PRESSURE EFFECTS; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SYNTHESIS (CHEMICAL); X RAY DIFFRACTION ANALYSIS;

SOLVOTHERMAL PROCESSES;

GALLIUM NITRIDE;

EID: 0036530328 PISSN: 00255408 EISSN: None Source Type: Journal
DOI: 10.1016/S0025-5408(02)00716-X Document Type: Article

Times cited : (6)

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