|
Volumn 188, Issue 2, 2001, Pages 715-718
|
Selective Area Growth of GaN on SiC Substrate by Ammonia-Source MBE
|
Author keywords
[No Author keywords available]
|
Indexed keywords
|
EID: 1842686009
PISSN: 00318965
EISSN: None
Source Type: Journal
DOI: 10.1002/1521-396X(200112)188:2<715::AID-PSSA715>3.0.CO;2-F Document Type: Article |
Times cited : (5)
|
References (9)
|