MOVPE growth of Ga 3D structures for fabrication of GaN materials

Journal of Crystal Growth

Volumn 261, Issue 2-3, 2004, Pages 253-258

  Sacilotti, M ^a   Imhoff, L ^a   Bourgeois, S ^a   Dumas, C ^a   Decobert, J ^b   Baldeck, P ^c   Colombier, I ^c  

^a UNIVERSITÉ DE BOURGOGNE   (France)

^b OPTO+   (France)

^c UNIV GRENOBLE ALPES   (France)

Author keywords

A2. Growth from vapor; A3. Metalorganic chemical vapor deposition; B1. Gallium compounds; B1. Metals; B1. Nitrides; B2. Nonlinear optical materials; B2. Semiconducting gallium compounds; B2. Semiconducting III V materials

Indexed keywords

ANNEALING; CATALYSIS; CHEMICAL VAPOR DEPOSITION; ELECTRON ENERGY LOSS SPECTROSCOPY; ENERGY DISPERSIVE SPECTROSCOPY; METALLORGANIC VAPOR PHASE EPITAXY; MICROSTRUCTURE; PARTIAL PRESSURE; SCANNING ELECTRON MICROSCOPY; SILICON; X RAY DIFFRACTION ANALYSIS;

FLOW RATES; NITRIDATION;

GALLIUM NITRIDE;

EID: 0347569581     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.11.065     Document Type: Conference Paper

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