Crystal size and oxygen segregation for polycrystalline GaN

Journal of Applied Physics

Volumn 92, Issue 6, 2002, Pages 3397-3403

  Butcher, K S A ^a   Timmers, H ^b   Afifuddin, ^a   Chen, Patrick P T ^a   Weijers, T D M ^b   Goldys, E M ^a   Tansley, T L ^a   Elliman, R G ^b   Freitas Jr , J A ^c  

^a MACQUARIE UNIVERSITY   (Australia)

^b AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^c NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL SIZE; DEFECT COMPLEX; ELASTIC RECOIL DETECTION ANALYSIS; GAN FILM; GRAIN SIZE; LOW TEMPERATURES; OXYGEN CONTENT; OXYGEN SEGREGATION; POLYCRYSTALLINE GAN; SAMPLE MORPHOLOGY; SURFACE AREA; THEORETICAL STUDY;

ATOMIC FORCE MICROSCOPY; DEFECTS; DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; GOLD; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; HYDROGEN; OXYGEN; SEGREGATION (METALLOGRAPHY); X RAY DIFFRACTION;

CARBON FILMS;

EID: 18644386772     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1499232     Document Type: Article

References (31)

1. J. W. Orton and C. T. Foxon, Rep. Prog. Phys. 61, 1 (1998). rpp RPPHAG 0034-4885
2. D. P. Bour, N. M. Nickel, C. G. Van de Walle, M. S. Kneissl, B. S. Krusor, Ping Mei and N. M. Johnson, Appl. Phys. Lett. 76, 2182 (2000). apl APPLAB 0003-6951
3. S. Guha, N. A. Bojarczuk, and D. W. Kisker, Appl. Phys. Lett. 69, 2879 (1996). apl APPLAB 0003-6951
4. K. R. Evans, T. Lei, and C. R. Jones, Solid-State Electron. 41, 339 (1997). sel SSELA5 0038-1101
5. A. V. Blant, S. V. Novikov, T. S. Cheng, L. B. Flannery, I. Harrison, R. P. Campion, D. Korakakis, E. C. Larkins, Y. Kribes, and C. T. Foxon, J. Cryst. Growth 203, 349 (1999). jcr JCRGAE 0022-0248
6. H. Timmers, R. G. Elliman, G. R. Palmer, T. R. Ophel, and D. J. O'Connor, Nucl. Instrum. Methods Phys. Res. B 136, 611 (1998). nib NIMBEU 0168-583X
7. H. Timmers, T. R. Ophel, and R. G. Elliman, Nucl. Instrum. Methods Phys. Res. B 161, 19 (2000). nib NIMBEU 0168-583X
8. H. Timmers, R. G. Elliman, and T. R. Ophel, Nucl. Instrum. Methods Phys. Res. A 447, 536 (2000). nia NIMAER 0168-9002
9. S. J. Pearton, J. C. Zolper, R. J. Shul, and F. Re, J. Appl. Phys. 86, 1 (1999). jap JAPIAU 0021-8979
10. O. Ambacher, J. Phys. D 31, 2653 (1998). jpd JPAPBE 0022-3727
11. H. Ch. Alt, Mater. Sci. Forum 83, 369 (1992). msf MSFOEP 0255-5476
12. K. S. A. Butcher, L. Mo, D. Alexiev, and T. L. Tansley, J. Cryst. Growth 156, 361 (1995). jcr JCRGAE 0022-0248
13. K. S. A. Butcher, D. Alexiev, and T. L. Tansley, Aust. J. Phys. 46, 317 (1993). auj AUJPAS 0004-9506
14. Y. Kim, S. G. Subramanya, H. Siegle, J. Kruger, P. Perlin, E. R. Weber, S. Ruvimov, and Z. Liliental-Weber, J. Appl. Phys. 88, 6032 (2000). jap JAPIAU 0021-8979
15. C. G. Van de Walle, J. Neugebauer, and C. Stampfl, in Gallium Nitride and Related Semiconductors, edited by J. H. Edgar, S. Strite, I. Akasaki, H. Amano, and C. Wetzel (Inspec, London, 1999), p. 281.
16. K. Leung, A. F. Wright, and E. B. Stechel, Appl. Phys. Lett. 74, 2495 (1999). apl APPLAB 0003-6951
17. S. M. Lee, M. A. Belkhir, X. Y. Zhu, Y. H. Lee, Y. G. Hwang, and T. Frauenheim, Phys. Rev. B 61, 16033 (2000). prb PRBMDO 0163-1829
18. J. Elsner, R. Jones, M. I. Heggie, P. K. Sitch, M. Haugk, T. Frauenheim, S. Oberg, and P. R. Briddon, Phys. Rev. B 58, 12571 (1998). prb PRBMDO 0163-1829
19. J. Elsner, R. Jones, M. Haugk, R. Gutierrez, T. Frauenheim, M. I. Heggie, S. Oberg, and P. R. Briddon, Appl. Phys. Lett. 73, 3530 (1998). apl APPLAB 0003-6951
20. R. Gutierrez, M. Haugk, T. Frauenheim, J. Elsner, R. Jones, M. I. Heggie, S. Oberg, and P. R. Briddon, Philos. Mag. Lett. 79, 147 (1999). pml PMLEEG 0950-0839
21. A. T. Blumenau, J. Elsner, R. Jones, M. I. Heggie, S. Oberg, T. Frauenheim, and P. R. Briddon, J. Phys.: Condens. Matter 12, 10223 (2000). jcz JCOMEL 0953-8984
22. J. Oila, V. Ranki, J. Kovioja, K. Saarinen, P. Hautojarvi, J. Likonen, J. N. Baranowski, K. Pakula, T. Suski, M. Leszczynski, and I. Grzegory, Phys. Rev. B 63, 045205 (2001). prb PRBMDO 0163-1829
23. Z. Lilental-Weber, Y. Chen, S. Ruvimov, and J. Washburn, Phys. Rev. Lett. 79, 2835 (1997). prl PRLTAO 0031-9007
24. B. Zhou, X. Li, T. L. Tansley, K. S. A. Butcher, and M. R. Phillips, J. Cryst. Growth 151, 249 (1995). jcr JCRGAE 0022-0248
25. B. Zhou, X. Li, T. L. Tansley, and K. S. A. Butcher, J. Cryst. Growth 160, 201 (1996). jcr JCRGAE 0022-0248
26. B. Zhou, X. Li, T. L. Tansley, and K. S. A. Butcher, Appl. Surf. Sci. 100, 643 (1996). asu ASUSEE 0169-4332
27. Z. Liliental-Weber et al., Proceedings of the Topical Workshop on III-V Nitrides (TWN95) edited by I. Akasaki and K. Onabe (Elsevier Science, New York, 1997), p. 167.
28. R. G. Elliman, H. Timmers, T. R. Ophel, T. D. M. Weijers, L. S. Wielunski, and G. L. Harding, Nucl. Instrum. Methods Phys. Res. B 161, 231 (2000). nib NIMBEU 0168-583X
29. M. Kishi, M. Suzuki, and K. Ogawa, Jpn. J. Appl. Phys., Part 1 31, 1153 (1992). jjb JAPNDE 0021-4922
30. Taken from the JCPDS-ICDD PDF-2 database.
31. H. Okumura, in Gallium Nitride and Related Semiconductors, edited by J. H. Edgar, S. Strite, I. Akasaki, H. Amano, and C. Wetzel (Inspe, London, 1999), p. 402.