Study of stimulated emission from InGaN/GaN multiple quantum well structures

Journal of Crystal Growth

Volumn 273, Issue 1-2, 2004, Pages 48-53

  Wang, T ^a,b   Parbrook, P J ^a   Whitehead, M A ^a   Fan, W H ^a   Fox, A M ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b TIANJIN UNIVERSITY   (China)

Author keywords

A1. Optical pumping; A1. Stimulated emission; A3. Quantum well; B1. InGaN; B2. Piezoelectric field

Indexed keywords

CHARGE COUPLED DEVICES; CHEMICAL LASERS; GALLIUM NITRIDE; LIGHT EMITTING DIODES; OPTICAL PUMPING; PHOTOLUMINESCENCE; PIEZOELECTRICITY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS; SPONTANEOUS EMISSION; X RAY DIFFRACTION;

LOW INJECTION CURRENTS; PIEZOELECTRIC FIELD INDUCED QUANTUM CONFINED STARK EFFECT (QCSE); QUANTUM WELL STRUCTURES; STIMULATED EMISSIONS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 9944234898     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.06.061     Document Type: Article

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