Preparation of stoichiometric GaN(0001)-1 × 1 studied with spectromicroscopy

Surface Science

Volumn 572, Issue 2-3, 2004, Pages 409-417

  Widstrand, S M ^a   Magnusson, K O ^a   Larsson, M I ^b   Johansson, L S O ^a   Gustafsson, J B ^a   Moons, E ^a   Yeom, H W ^c   Miki, H ^d   Oshima, M ^e  

^a KARLSTAD UNIVERSITY   (Sweden)

^b Nanostellar Inc   (United States)

^c Yonsei University   (South Korea)

^d High Performance Materials Department   (Japan)

^e UNIVERSITY OF TOKYO   (Japan)

Author keywords

Ammonia; Gallium nitride; Low energy electron diffraction (LEED); Photoelectron spectroscopy; Semiconducting films

Indexed keywords

AMMONIA; LIGHT EMITTING DIODES; LOW ENERGY ELECTRON DIFFRACTION; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTING FILMS; SEMICONDUCTOR LASERS; STOICHIOMETRY;

LATERAL RESOLUTION; RESOLUTION LIMIT; SPECTROMICROSCOPY IMAGES; SURFACE QUALITY;

GALLIUM NITRIDE;

EID: 9744257871     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2004.09.019     Document Type: Article

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