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Volumn 507-510, Issue , 2002, Pages 223-228
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Electronic band structure of gallium nitride: A comparative angle-resolved photoemission study of single crystals and thin films
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Author keywords
Angle resolved photoemission; Gallium nitride; Low index single crystal surfaces; Semiconducting films; Surface electronic phenomena (work function, surface potential, surface states, etc.)
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Indexed keywords
BAND STRUCTURE;
EPITAXIAL GROWTH;
GALLIUM NITRIDE;
LOW ENERGY ELECTRON DIFFRACTION;
PHOTOEMISSION;
SURFACE PHENOMENA;
SYNCHROTRON RADIATION;
THIN FILMS;
ANGLE RESOLVED PHOTOEMISSION;
SINGLE CRYSTALS;
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EID: 0036608940
PISSN: 00396028
EISSN: None
Source Type: Journal
DOI: 10.1016/S0039-6028(02)01216-5 Document Type: Conference Paper |
Times cited : (13)
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References (16)
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