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Volumn 507-510, Issue , 2002, Pages 223-228

Electronic band structure of gallium nitride: A comparative angle-resolved photoemission study of single crystals and thin films

Author keywords

Angle resolved photoemission; Gallium nitride; Low index single crystal surfaces; Semiconducting films; Surface electronic phenomena (work function, surface potential, surface states, etc.)

Indexed keywords

BAND STRUCTURE; EPITAXIAL GROWTH; GALLIUM NITRIDE; LOW ENERGY ELECTRON DIFFRACTION; PHOTOEMISSION; SURFACE PHENOMENA; SYNCHROTRON RADIATION; THIN FILMS;

EID: 0036608940     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(02)01216-5     Document Type: Conference Paper
Times cited : (13)

References (16)
  • 7
    • 0009586443 scopus 로고    scopus 로고
    • Ph.D. Thesis, Kiel University, Germany, in German
    • (1999)
    • Wichert, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.