Degradation of RuO2 thin films in hydrogen atmosphere at temperatures between 150 and 250 °C

Microelectronics Reliability

Volumn 43, Issue 1, 2003, Pages 49-55

  Jelenkovic, Emil V ^a   Tong, K Y ^a   Cheung, W Y ^b   Wong, S P ^b  

^a HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; HYDROGEN; MOS CAPACITORS; RESISTORS; SCANNING ELECTRON MICROSCOPY; THERMAL EFFECTS; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

THIN FILM RESISTORS;

RUTHENIUM COMPOUNDS;

EID: 0037226135     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(02)00274-3     Document Type: Article

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