Temperature dependence of resistance in reactively sputtered RuO2 thin films

Journal of Materials Science Letters

Volumn 20, Issue 8, 2001, Pages 699-700

  Tong, K Y ^a   Jelenkovic, V ^a   Cheung, W Y ^b   Wong, S P ^b  

^a HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

^b CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; DEPOSITION; ELECTRIC RESISTANCE; HALL EFFECT; MAGNETRON SPUTTERING; MICROSTRUCTURE; OXIDATION; RUTHENIUM COMPOUNDS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON WAFERS; TEMPERATURE; X RAY DIFFRACTION ANALYSIS;

HALL EFFECT MEASUREMENT; RUTHENIUM DIOXIDE; TEMPERATURE DEPENDENCE; THERMAL OXIDATION;

THIN FILMS;

EID: 0035870310     PISSN: 02618028     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1010902806603     Document Type: Article

References (9)