Improved characteristics of metamorphic InAlAs/InGaAs high electron mobility transistor with symmetric graded inxGa1-xAs channel

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 5, 2004, Pages 2429-2433

  Li, Yih Juan ^a   Hsu, Wei Chou ^a   Chen, I Liang ^a   Lee, Ching Sung ^b   Chen, Yeong Jia ^a   Lo, Ikai ^c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b FENG CHIA UNIVERSITY   (Taiwan)

^c NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CONCENTRATION (PROCESS); ELECTRON MOBILITY; FOURIER TRANSFORMS; HIGH ELECTRON MOBILITY TRANSISTORS; MOLECULAR BEAM EPITAXY; OSCILLATIONS; SURFACE ROUGHNESS;

COULOMB SCATTERING; METAMORPHIC BUFFER LAYER; OSCILLATION FREQUENCY; ROUGHNESS SCATTERING;

INDIUM COMPOUNDS;

EID: 9744224357     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1781662     Document Type: Article

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