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Volumn 28, Issue 1, 2000, Pages 47-54

Investigation of a graded channel InGaAs/GaAs heterostructure transistor

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CURRENT DENSITY; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

EID: 0034230141     PISSN: 07496036     EISSN: None     Source Type: None    
DOI: 10.1006/spmi.2000.0849     Document Type: Article
Times cited : (2)

References (12)
  • 4
    • 0026867579 scopus 로고
    • 0.63As /GaAs high electron mobility transistor prepared by low-presure metallorganic chemical vapor deposition
    • 0.63As /GaAs high electron mobility transistor prepared by low-presure metallorganic chemical vapor deposition. Solid-State Electron. 35:1992;635-638.
    • (1992) Solid-State Electron. , vol.35 , pp. 635-638
    • Hsu, W.C.1    Shieh, H.M.2
  • 5
    • 0026168804 scopus 로고
    • 0.75As /GaAs pseudomorphic high electron mobility transistor structures prepared by low-pressure metal organic chemical vapor deposition
    • 0.75As /GaAs pseudomorphic high electron mobility transistor structures prepared by low-pressure metal organic chemical vapor deposition. Jpn. J. Appl. Phys. 30:1991;1158-1163.
    • (1991) Jpn. J. Appl. Phys. , vol.30 , pp. 1158-1163
    • Chang, C.Y.1    Lin, W.2    Hsu, W.C.3    W., T.S.4    Chang, S.Z.5    Wang, C.6
  • 6
    • 0026172886 scopus 로고
    • A quantum well δ -doped GaAs FET fabricated by low-pressure metal organic chemical vapor deposition
    • Hsu W. C., Lin W., Wang C. A quantum well δ -doped GaAs FET fabricated by low-pressure metal organic chemical vapor deposition. Solid-State Electron. 34:1991;649-653.
    • (1991) Solid-State Electron. , vol.34 , pp. 649-653
    • Hsu, W.C.1    Lin, W.2    Wang, C.3
  • 8
    • 0343214161 scopus 로고
    • 1 - x As/GaAs pseudomorphic structure grown by low-pressure metal organic chemical vapor deposition
    • 1 - x As/GaAs pseudomorphic structure grown by low-pressure metal organic chemical vapor deposition. Appl. Phys. Lett. 59:1991;1075-1077.
    • (1991) Appl. Phys. Lett. , vol.59 , pp. 1075-1077
    • Hsu, W.C.1    Chen, C.M.2    Hsu, R.T.3
  • 12
    • 36449003946 scopus 로고
    • Novel charge injection transistors with heterojunction source (Launcher) and drain (Blocker) configurations
    • Tian H., Kim K. W., Littlejohn M. A. Novel charge injection transistors with heterojunction source (Launcher) and drain (Blocker) configurations. Appl. Phys. Lett. 63:1993;174-176.
    • (1993) Appl. Phys. Lett. , vol.63 , pp. 174-176
    • Tian, H.1    Kim, K.W.2    Littlejohn, M.A.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.