0.15 μm gate length InAlAs/InGaAs power metamorphic HEMT on GaAs substrate with extremely low noise characteristics

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2003, Pages 114-117

  Yoon, Hyung Sup ^a   Lee, Jin Hee ^a   Shim, Jae Yeob ^a   Hong, Ju Yeon ^a   Kang, Dong Min ^a   Chang, Woo Jin ^a   Kim, Hae Cheon ^a   Cho, Kyoung Ik ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; ELECTRON BEAM LITHOGRAPHY; GATES (TRANSISTOR); MICROWAVES; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SPURIOUS SIGNAL NOISE; THRESHOLD VOLTAGE; TRANSCONDUCTANCE; ARSENIC COMPOUNDS; GALLIUM ARSENIDE; INDIUM; INDIUM COMPOUNDS; INDIUM PHOSPHIDE; MICROWAVE DEVICES; NOISE FIGURE;

POWER METAMORPHIC TRANSISTORS; SCHOTTKY LAYER; SEMICONDUCTING INDIUM ALUMINUM ARSENIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EXTRINSIC TRANSCONDUCTANCE; GAIN; INDIUM GALLIUM ARSENIDE; MHEMTS; MINIMUM NOISE FIGURE; NOISE CHARACTERISTIC; NOISE MEASUREMENTS; OUTPUT CHARACTERISTICS;

EID: 0037810897     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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