Improved double delta-doped InGaAs/GaAs heterostructures with symmetric graded channel

Materials Chemistry and Physics

Volumn 61, Issue 3, 1999, Pages 266-269

  Li, Y J ^a   Shieh, H M ^b   Su, J S ^a   Kao, M J ^a   Hsu, W C ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b KUNG SHAN INSTITUTE OF TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRON GAS; FIELD EFFECT TRANSISTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SHUBNIKOV-DE HAAS EFFECT; TRANSCONDUCTANCE;

SYMMETRIC GRADED CHANNEL;

HETEROJUNCTIONS;

EID: 0033224284     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0254-0584(99)00146-7     Document Type: Article

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