Effects of low-energy ion beam glancing angle nitridation on nGaAs surface and Co-nGaAs Schottky contact properties

Vacuum

Volumn 77, Issue 1, 2004, Pages 79-86

  Meskinis S ^a   Slapikas K ^a   Puceta, M ^a   Tamulevicius S ^a,b   Matukas, J ^c  

^a KAUNAS UNIVERSITY OF TECHNOLOGY   (Lithuania)

^b KAUNAS UNIVERSITY OF TECHNOLOGY   (Lithuania)

^c VILNIUS UNIVERSITY   (Lithuania)

Author keywords

Co nGaAs Schottky contact; GaAs; Ion beam nitridation; Low effective barrier height

Indexed keywords

ELECTRONIC PROPERTIES; INERT GASES; IRRADIATION; NITRIDES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

CO-NGAAS SCHOTTKY CONTACT; ION BEAM NITRIDATION; LIQUID NITROGEN; LOW EFFECTIVE BARRIER HEIGHT;

ION BEAMS;

EID: 9644283052     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2004.08.007     Document Type: Article

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