MBE growth of Nitride-Arsenide materials for long wavelength optoelectronics

MRS Internet Journal of Nitride Semiconductor Research

Volumn 5, Issue SUPPL. 1, 2000, Pages

  Spruytte, Sylvia G ^a   Coldren, Christopher W ^a   Marshall, Ann F ^a   Larson, Michael C ^b   Harris, James S ^a  

^a STANFORD UNIVERSITY   (United States)

^b LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BONDING; CHEMICAL BONDS; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; NITROGEN; OPTOELECTRONIC DEVICES; PLASMA SOURCES; SEMICONDUCTOR QUANTUM WELLS; X RAY PHOTOELECTRON SPECTROSCOPY;

CRYSTAL QUALITY; NITROGEN CONCENTRATIONS; PLASMA CONDITIONS;

NITRIDES;

EID: 3242764549     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s109257830000466x     Document Type: Conference Paper

References (9)

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