Growth of GaN films on nitrided GaAs substrates using hot-wire CVD

Thin Solid Films

Volumn 430, Issue 1-2, 2003, Pages 174-177

  Yasui, Kanji ^a   Morimoto, Kantarou ^a   Akahane, Tadashi ^a  

^a NAGAOKA UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

Electron cyclotron resonance (ECR) plasma; Gallium nitride; Hot wire chemical vapor deposition

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRON CYCLOTRON RESONANCE; EPITAXIAL GROWTH; PLASMA APPLICATIONS; SUBSTRATES;

AMMONIA PLASMA;

GALLIUM NITRIDE;

EID: 0038527222     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(03)00104-4     Document Type: Conference Paper

References (12)

1. Mizuta M., Fujieda S., Matsumoto Y. Jpn. J. Appl. Phys. 25:1986;L945.
2. Paisley M.J., Sitar Z., Posthill J.B., Davis R.F. J. Vac. Sci. Technol. A. 7:1989;701.
3. Okumura H., Misawa S., Yoshida Y. Appl. Phys. Lett. 59:1991;1058.
4. Molner R.J., Moustakas T.D. J. Appl. Phys. 76:1994;4587.
5. Kikuchi A., Hoshi H., Kishino K. Jpn. J. Appl. Phys. 33:1994;688.
6. Liu H., Frenkel A.C., Kiand J.G., Park R.M. J. Appl. Phys. 74:1993;6124.
7. Matsumura H. Thin Solid Films. 395:2001;1.
8. Yasui K., Kikuchi M., Uwabachi A., Akahane T. Jpn. J. Appl. Phys. 38:1999;4329.
9. Hoshino S., Narita Y., Yasui K., Akahane T. Technical Report IEICE CPM99-87. 1999;. p. 1 in Japanese.
10. Ishikawa T., Ikoma H. Jpn. J. Appl. Phys. 31:1992;3981.
11. Schieffer P., Jezequel G., Lepine B., Sebilleau D., Feuillet G., Daudin B. Surf. Sci. 482-485:2001;593.
12. Yoshida H. Master's Thesis. 1995;Nagaoka University of Technology, Japan, in Japanese.