Passivation-mediated growth of Co on Se, S and O rich GaAs surfaces: A potential approach to control interface crystallinity and magnetic continuity

Journal of Applied Physics

Volumn 91, Issue 6, 2002, Pages 3943-3945

  Nath, Krishna G ^a   Maeda, Fumihiko ^a   Suzuki, Satoru ^a   Watanabe, Yoshio ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CO DEPOSITION; CO FILMS; CONTROL INTERFACES; CRYSTALLINE GROWTH; CRYSTALLINE ORDER; CRYSTALLINITIES; FILM CRYSTALLINITY; GAAS; GAAS SURFACES; GAAS(001); INITIAL STAGES; INTERFACE STRUCTURES; MAGNETIC LINEAR DICHROISM; MAGNETIC PROPERTIES OF CO; OVERLAYERS; SPIN FILTERS; SPIN-INJECTION; SUBSTRATE CONDITIONS; TRANSMISSION ELECTRON MICROSCOPY TEM;

ANGULAR DISTRIBUTION; COBALT; CRYSTALLINE MATERIALS; FILM GROWTH; GALLIUM ARSENIDE; MAGNETIC PROPERTIES; METALLIC FILMS; PASSIVATION; SEMICONDUCTING GALLIUM; SEMICONDUCTING SELENIUM COMPOUNDS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

INTERFACES (MATERIALS);

EID: 0037087272     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1452760     Document Type: Article

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