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Volumn 82, Issue 23, 2003, Pages 4092-4094

Analysis of the transport process providing spin injection through an Fe/AlGaAs Schottky barrier

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TUNNELING; HETEROJUNCTIONS; MIM DEVICES; MOLECULAR BEAM EPITAXY; PHONONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

EID: 0038505239     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1580631     Document Type: Article
Times cited : (352)

References (23)
  • 21
    • 0037569500 scopus 로고    scopus 로고
    • note
    • Note that the voltage range here is much smaller than the ∼2 V applied to the LED in the EL experiment. In the transport measurement, the voltage drop is primarily across the tunnel barrier interface, while in the LED, a variety of series and contact resistances have to be considered, including the ∼1.5-eV bias needed to flat-band the n-i-p GaAs QW LED during operation.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.