GaN-passivation of GaAs with less plasma damages: Effects of input plasma power, substrate heating and post-thermal annealing

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 4 A, 2000, Pages 1629-1634

  Tanemura, Hidetoshi ^a   Kanazawa, Keisuke ^a   Ikoma, Hideaki ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

Gallium arsenide; Gallium nitride passivation; Helicon wave plasma; J V characteristics; Plasma power; Substrate heating; Thermal stability

Indexed keywords

EID: 9644299870     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.1629     Document Type: Article

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