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Applied Surface Science

Volumn 127-129, Issue , 1998, Pages 559-563

GaN thin films deposition by laser ablation of liquid Ga target in nitrogen reactive atmosphere

(6) Dinescu, M a Verardi, P b Boulmer Leborgne, C c Gerardi, C d Mirenghi, L d Sandu, V e

a NATIONAL INSTITUTE FOR LASER (Romania)

b CNR Consiglio Nazionale delle Ricerche (Italy)

c UNIVERSITÉ D'ORLÉANS (France)

d Centro Nazionale per la Ricerca e lo Sviluppo dei Materiali (Italy)

e NATIONAL INSTITUTE OF MATERIALS PHYSICS (Romania)

Author keywords

GaN; Liquid phase PLD

Indexed keywords

CHEMICAL BONDS; CRYSTAL ORIENTATION; ENERGY GAP; LASER ABLATION; LIGHT ABSORPTION; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SILICON WAFERS; SUBSTRATES; THIN FILMS; TRANSPARENCY; X RAY DIFFRACTION ANALYSIS;

GALLIUM NITRIDE; NITROGEN REACTIVE ATMOSPHERE; PULSED LASER DEPOSITION;

SEMICONDUCTING FILMS;

EID: 0032074105 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(97)00705-8 Document Type: Article

Times cited : (45)

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