Optical and electrical characterization of n-GaAs surfaces passivated by N2-H2 plasma

Journal of Luminescence

Volumn 102-103, Issue SPEC, 2003, Pages 519-524

  Augelli, V ^a   Ligonzo, T ^a   Minafra, A ^a   Schiavulli, L ^a   Capozzi, V ^b   Perna, G ^a,b   Ambrico, M ^c   Losurdo, M ^c  

^a UNIVERSITY OF BARI   (Italy)

^b UNIVERSITY OF FOGGIA   (Italy)

^c CNR   (Italy)

Author keywords

GaAs; Nitridation; Photoluminescence; Schottky barrier

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); FERMI LEVEL; NITRIDING; OPTOELECTRONIC DEVICES; PASSIVATION; PHOTOLUMINESCENCE; SCHOTTKY BARRIER DIODES;

WET PASSIVATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0037402316     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-2313(02)00603-8     Document Type: Conference Paper

References (21)

1. Aydil E.S., Zhou Z.H., Gottscho R.A., Chabal Y.J. J. Vac. Sci. Technol. B. 13:1995;258.
2. H.H. Lee, R.J. Racicot, S.H. Lee, Appl. Phys. Lett. 54 (1989) 724 and references therein.
3. J. Singh, Physics of Semiconductors and their Heterostructures, McGraw-Hill, New York, 1993, p. 509.
4. Vogt K.W., Kohl P.A. J. Appl. Phys. 74:1993;6448 Shimaoka G., Udagawa T. Appl. Surf. Sci. 142:1999;237.
5. Vogt K.W., Kohl P.A. J. Appl. Phys. 74:1993;6448 Shimaoka G., Udagawa T. Appl. Surf. Sci. 142:1999;237.
6. Anantathanasarn S., Ootomo S., Hashizume T., Hasegawa H. Appl. Surf. Sci. 159-160:2000;456.
7. Berkovits V.L., L'vova T.V., Ulin V.P. Vacuum. 57:2000;201.
8. Berkovits V.L., Ulin V.P., Losurdo M., Capezzuto P., Bruno G., Perna G., Capozzi V. Appl. Phys. Lett. 80:2002;3739.
9. Huh C., Park S.J., Ahn S., Han J.Y., Cho K.J., Seo J.M. J. Vac. Sci. Technol. B. 6:1998;192.
10. Losurdo M., Capezzuto P., Bruno G., Irene E.A. Phys. Rev. B. 58:1998;15878.
11. Bruno G., Capezzuto P., Losurdo M. Vacuum. 57:2000;189.
12. Palumbo V., Valentini A. Solid State Electron. 43:1999;2021.
13. Ishida T., Ikoma H. J. Appl. Phys. 74:1993;3977.
14. E.S. Aydil, K.P. Giapis R.A. Gottscho, V.M. Donnely, E. Yoon, J. Vac. Sci. Technol. B 11 (1993) 195, and references therein.
15. Losurdo M., Capezzuto P., Bruno G., Perna G., Capozzi V. Appl. Phys. Lett. 81:2002;16.
16. Fowler R.H. Phys. Rev. 38:1931;45.
17. Mikhelashvili V., Eisenstein G., Udzin R. Solid State Electron. 45:2001;143.
18. Hara A., Kasahara F., Wada S., Ikoma H. J. Appl. Phys. 85:1999;3234.
19. Rhoderick E.H. Metal Semiconductor Contacts. 1978;Claredon, Oxford.
20. Perfetti P., Quaresima C., Coluzza C., Fortunato C., Margaritondo G. Phys. Rev. Lett. 57:1986;2065.
21. Almeida J., Coluzza C., Dell'Orto T., Margaritondo G., Terrasi A. J. Appl. Phys. 81:1997;292.