Formation of high quality gallium nitride thin films on Ga-diffused Si(1 1 1) substrate

Applied Surface Science

Volumn 210, Issue 3-4, 2003, Pages 153-157

  Xue, Chengshan ^a   Yang, Li ^a   Wang, Cuimei ^a   Zhuang, Huizhao ^a   Wei, Qinqin ^a  

^a SHANDONG NORMAL UNIVERSITY   (China)

Author keywords

Ammoniating; Ga 2 O 3; GaN; r.f. Magnetron sputtering

Indexed keywords

ATOMIC FORCE MICROSCOPY; DEPOSITION; DIFFUSION; GALLIUM NITRIDE; MAGNETRON SPUTTERING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SILICON; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

SILICON SUBSTRATES;

SURFACE TOPOGRAPHY;

EID: 0037445992     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00154-5     Document Type: Article

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