TOF study of pulsed-laser ablation of aluminum nitride for thin film growth

Applied Surface Science

Volumn 137, Issue 1-3, 1999, Pages 91-97

  Chu, C ^a   Ong, P P ^a   Chen, H F ^a   Teo, H H ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Laser ablation; Laser ionization time of flight mass spectrometry (TOF MS); Pulsed laser deposition (PLD)

Indexed keywords

CRYSTAL IMPURITIES; CRYSTAL ORIENTATION; DEPOSITION; FILM GROWTH; IONIZATION OF SOLIDS; LASER ABLATION; MASS SPECTROMETRY; PHOTOIONIZATION; PULSED LASER APPLICATIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SUBSTRATES; THIN FILMS;

ALUMINUM NITRIDE; LASER IONIZATION; PULSED LASER DEPOSITION (PLD); TIME-OF-FLIGHT MASS SPECTROMETRY (TOF-MS);

SEMICONDUCTING FILMS;

EID: 0032778061     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00376-6     Document Type: Article

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