Crystallographic orientations and electrical properties of Bi3.47Lao0.85Ti3O12 thin films on Pt/Ti/SiO2/Si and Pt/SiO2/Si substrates

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 4 A, 2003, Pages 1665-1669

  Ryu, S O ^a   Lee, W J ^b   Lee, N Y ^a   Shin, W C ^a   You, I K ^a   Cho, S M ^a   Yoon, S M ^a   Yu, B G ^a   Koo, J K ^a   Kim, J D ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Dong Eui University   (South Korea)

Author keywords

BLT; Chemical solution; Crystallographic orientation; Ferroelectric hysterisis; RTA

Indexed keywords

BISMUTH COMPOUNDS; CRYSTALLOGRAPHY; ELECTRIC PROPERTIES; HEAT TREATMENT; NONVOLATILE STORAGE; PLATINUM COMPOUNDS; POLARIZATION; RAPID THERMAL ANNEALING; SUBSTRATES;

BISMUTH LANTHANUM TITANIUM OXIDE FILMS; FERROELECTRIC HYSTERESIS; FERRROELECTRIC NONVOLATILE MEMORY;

FERROELECTRIC THIN FILMS;

EID: 0038608166     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.1665     Document Type: Article

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