Physics of Isoelectronic Dopants in GaAs

Dilute Nitride Semiconductors

Volumn , Issue , 2005, Pages 179-221

  Mascarenhas, A ^a   Francoeur, S ^a   Yoon, S ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 85148925261     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1016/B978-008044502-1/50006-8     Document Type: Chapter

References (75)

1. R.A. Faulkner (1968) Toward a theory of isoelectronic impurities in semiconductors. Phys. Rev. 175 991.
2. D.G. Thomas and J.J. Hopfield (1966) Isoelectronic traps due to nitrogen in gallium phosphide. Phys. Rev. 150 680.
3. S.-H. Wei and A. Zunger (1998) Calculated natural band offsets of all II–VI and III–V semiconductors: chemical trends and the role of cation d orbitals. Appl. Phys. Lett. 72(16), 2011.
4. D.J. Wolford, J.A. Bradley, K. Fry and J. Thompson (1984) The nitrogen isoelectronic trap in GaAs. Physics of Semiconductors New York: Springer 627-630.
5. X. Liu, M.-E. Pistol and L. Samuelson (1990) Nitrogen pair luminescence in GaAs. Appl. Phys. Lett. 56(15), 1451.
6. R. Schwabe, W. Seifert, F. Bugge and R. Bindemann (1985) Photoluminescence of nitrogendoped VPE GaAs. Solid State Commun. 5(2), 167.
7. F.A. Trumbore, M. Gershenzon and D.G. Thomas (1966) Luminescence due to the isoelectronic substitution of bismuth for phosphorus in gallium phosphide. Appl. Phys. Lett. 9(1), 4.
8. Y. Burki, W. Czaja, V. Capozzi and P. Schwendimann (1983) The temperature dependence of the, photoluminescence and lifetime of ZnSe:O. J. Phys.: Condens. Matter 5 9237.
9. J.D. Cuthbert and D.G. Thomas (1968) Optical properties of tellurium as an isoelectronic trap in cadmium sulfide. J. Appl. Phys. 39(3), 1573.
10. S.G. Bishop, B.V. Shanabrook, P.B. Klein and R.L. Henry (1988) New isoelectronic trap: antimony in indium phosphide. Phys. Rev. B 38(12), 8469.
11. P.J. Dean, A.M. White, E.W. Williams and M.G. Astles (1971) The isoelectronic trap bismuth in indium phosphide. Solid State Commun. 9 1555.
12. I. Vurgaftman, J.R. Meyer and L.R. Ram-Mohan (2001) Band parameters for III–V compound semiconductors and their alloys. J. Appl. Phys. 89 5815.
13. W. Shan, W. Walukiewicz, J. Wu, K.M. Yu, J.W. Ager III, S.X. Li, E.E. Haller, J.F. Geisz, D.J. Friedman and S.R. Kurtz (2003) Band-gap bowing effects in B x Ga1x As alloys. J. Appl. Phys. 93 2696.
14. J.C. Mikkelsen and J.B. Boyce (1982) Atomic-scale structure of random solid solutions: extended X-ray-absorption fine-structure study of Ga1−x In1−x As. Phys. Rev. Lett. 49 1412.
15. M.F. Ling and D.J. Miller (1988) Band structure of semiconductor alloys. Phys. Rev. B 38 6113.
16. S.H. Wei and A. Zunger (1996) Giant and composition-dependent optical bowing coefficient in GaAsN alloys. Phys. Rev. Lett. 76 664.
17. T.N. Morgan (1968) Symmetry of electron states in GaP. Phys. Rev. 21 819.
18. M. Weyers, M. Sata and H. Ando (1992) Red shift of photoluminescence and absorption in dilute GaAsN alloy layers. Jpn. J. Appl. Phys. 31 L853.
19. M. Kondow, K. Uomi, K. Hosomi and T. Mozume (1994) Gas-source, molecular beam epitaxy of GaNxAs1−x using a N radical as the N source. Jpn. J. Appl. Phys. 33 1056.
20. J.D. Perkins, A. Mascarenhas, Y. Zhang, J.F. Geisz, D.J. Friedman, J.M. Olson and S.R. Kurtz (1999) Nitrogen-activated transitions, level repulsions and band gap reduction in GaAs1−x N x with x<0.03. Phys. Rev. Lett. 82 3312.
21. W. Shan, W. Walukiewick, J.W. Ager III, E.E. Haller, J.F. Geisz, D.J. Friedman, J.M. Olson and S.R. Kurtz (1999) Band anticrossing in GaInNAs alloys. Phys. Rev. Lett. 82 1221.
22. S. Francoeur, S.A. Nikishin, C. Jin, Y. Qiu and H. Temkin (1999) Excitons bound to nitrogen clusters in GaAsN. Appl. Phys. Lett. 75 1538.
23. Y. Zhang, A. Mascarenhas, H.P. Xin and C.W. Tu (2000) Formation of an impurity band and its quantum confinement in heavily doped GaAs:N. Phys. Rev. B 61 7479.
24. X. Liu, M.-E. Pistol and L. Samuelson (1990) Excitons bound to nitrogen pairs in GaAs. Phys. Rev. B 42 7504.
25. D.J. Wolford, K. Fry and J. Thompson (1985) The Nitrogen Isoelectronic Trap, in GaAs New York: Springer 627.
26. C. Skierbiszewski, P. Perlin, P. Wisneiwski, J.F. Geisz, T. Suski, K. Hingerl, W. Jantsch, D.E. Mars and W. Walukiewicz (2001) Band structure and optical properties of In y Ga1−y As1−x N x. Phys. Rev. B 65 035207.
27. E.P. O'Reilly, A. Lindsay, S. Tomic and M. Kamal-Saadi (2002) Tight-binding and k·p models for the electronic structure of Ga(In)NAs and related alloys. Semicond. Sci. Technol. 17 870.
28. J. Wu, W. Walukiewicz and E.E. Haller (2002) Band structure of highly mismatched semiconductor alloys: coherent potential approximation. Phys. Rev. B 65 233210.
29. N. Shtinkov, P. Desjardins and R.A. Masut (2003) Empirical tight-binding model for the electronic structure of GaAsN alloys. Phys. Rev. B 67 081202.
30. P.R.C. Kent and A. Zunger (2001) Theory of electronic structure evolution in GaAsN and GaPN alloys. Phys. Rev. B 64 11528.
31. P.R.C. Kent and A. Zunger (2001) Evolution of III–V nitride alloy electronic structure: the localized to delocalized transition. Phys. Rev. Lett. 86 2613.
32. Kent, P.R.C. (2001) private communication.
33. N.G. Szwacki and P. Boguslawski (2001) GaAs:N vs GaAs:B alloys: symmetry-induced effects. Phys. Rev. B 64 161201.
34. T. Mattila, S.H. Wei and A. Zunger (1999) Localization and anticrossing of electron levels in GaAs1−x N x. Phys. Rev. B 60 11245.
35. E.D. Jones, N.A. Modine, A.A. Allerman, S.R. Kurtz, A.F. Wright, S.T. Tozer and X. Wei (1999) Band structure of In x Ga1−x As1−y N y alloys and effects of pressure. Phys. Rev. B 60 4430.
36. H.P. Xin and C.W. Tu (1998) GaInNAs/GaAs multiple quantum wells grown by gas-source molecular beam epitaxy. Appl. Phys. Lett. 72 2442.
37. M.J. Seong, M.C. Hanna and A. Mascarenhas (2001) Composition dependence of Raman intensity of the nitrogen localized vibrational mode in GaAs1−x N x. Appl. Phys. Lett. 79 3974.
38. X. Yin and F.H. Pollak (1991) Novel contactless mode for electroreflectance. Appl. Phys. Lett. 59 2305.
39. D.E. Aspnes (1980) Handbook on Semiconductors: Modulation Spectroscopy/Electric Field Effects on the Dielectric Function of Semiconductors Amsterdam: North-Holland 109. Chapter 4A
40. D.E. Aspens (1966) Electric fields effect on optical absorption near threshold in solids. Phys. Rev. 147 554.
41. P. Lautenschlager, M. Garriga, S. Logothetidis and M. Cardona (1987) Interband critical points of GaAs and their temperature dependence. Phys. Rev. B 35 9174.
42. M. Chandrasekhar (1977) Effects of uniaxial stress on the electroreflectance spectrum of Ge and GaAs. Phys. Rev. B 16 2127.
43. A. Polimeni, M. Capizzi, M. Geddo, M. Fisher, M. Reinhardt and A. Forchel (2000) Effect of temperature on the optical properties of (InGa)(AsN)/GaAs single quantum wells. Appl. Phys. Lett. 77 2870.
44. H. Yagushi, S. Kikuchi, Y. Hijikata, S. Yoshida, D. Aoki and K. Onabe (2001) Photoluminescence study on temperature dependence of band gap energy of GaAsN alloys. Phys. Status Solidi (b) 228 273.
45. H. Gruning, L. Chen, T. Hartmann, P.J. Klar, W. Heimbrodt, F. Hohnsdorf, J. Koch and W. Stolz (1999) Optical spectroscopy studies of N-related bands in Ga(N,As). Phys. Status Solidi 215 39.
46. K. Uesugi, I. Suemune, T. Hasegawa, T. Akutagawa and T. Nakamura (2000) Temperature dependence of band gap energies of GaAsN alloys. Appl. Phys. Lett. 76 1280.
47. Y. Zhang, B. Fluegel, M. Hanna, A. Duda and A. Mascarenhas (2002) E.D. Jones, M.O. Manasreh, K.D. Choquette, D. Friedman,(Eds) Electronic structure near the band gap of heavily nitrogen doped GaAs and Gap Materials Research Society Symposium Proceedings vol. 692 Pittsburgh, PA: Materials Research Society 49.
48. Y. Zhang, A. Mascarenhas, J.F. Geisz, H.P. Xin and C.W. Tu (2001) Discrete and continuous spectrum of nitrogen-induced bound states in heavily doped GaAs1−x As x. Phys. Rev. B 63 85205.
49. I. Suemune, K. Uesugi and W. Walukiewicz (2000) Role of nitrogen in the reduced temperature dependence of band-gap energy in GaAsN. Appl. Phys. Lett. 77 3021.
50. E.F. Schubert, E.O. Göbel, Y. Horikoshi, K. Ploog and H.J. Queisser (1984) Alloy broadening in photoluminescence spectra of Al x Ga1−x As. Phys. Rev. B 30 813.
51. O. Berolo, J.C. Woolley and J.A. Van Vechten (1973) Effect of disorder on the conductionband effective mass, valence-band spin-orbit splitting, and the direct band gap in III–V alloys. Phys. Rev. B 8 3794.
52. D.J. Chadi (1977) Spin-orbit splitting in crystalline and compositionally disordered semiconductors. Phys. Rev. B 16 790.
53. Y. Zhang, A. Mascarenhas, H.P. Xin and C.W. Tu (2000) Valence-band splitting and shear deformation potential of dilute GaAs1−x N x alloys. Phys. Rev. B 61 4433.
54. J. Wagner, K. Kohler, P. Ganser and N. Herres (2000) GaAsN interband transitions involving localized and extended states probed, by resonant Raman scattering and spectroscopic ellipsometry. Appl. Phys. Lett. 77 3592.
55. J. Sik, M. Schubert, G. Leibiger, V. Gottschalch, G. Kirpal and J. Humlicek (2000) Nearband gap optical functions spectra, and band-gap energies of GaNAs/GaAs superlattice heterostructures measured by spectroscopic ellipsometry. Appl. Phys. Lett. 76 2859.
56. J.D. Perkins and A. Mascarenhas (1998) DOE Center for Synthesis and Processing Workshop on, Dilute Nitrides. Perkins et al. were the first to report the direct experimental observation of the E +, Shan et al. reported only the inference of such a level from high pressure studies of E 0 at this symposium, but they subsequently reporduced, our results and published before us Denver, CO, September 1998
57. L. Bellaiche, S.-H. Wei and A. Zunger (1996) Localization and percolation in semiconductor alloys: GaAsN vs GaAsP. Phys. Rev. B 54 17568.
58. S. Franceour, M.-J. Seong, M.C. Hanna, J.F. Geisz and A. Mascarenhas (2003) Origin of the nitrogen-induced optical transitions in GaAs1−x N x. Phys. Rev. B 68 075207.
59. J.R. Chelikowski and M.L. Cohen (1976) Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductors. Phys. Rev. B 14 556.
60. D.E. Aspnes (1976) GaAs lower conduction-band minima: ordering and properties. Phys. Rev. B 14 5331.
61. J.D. Perkins, A. Mascarenhas, J.F. Geisz and D.J. Friedman (2001) Conduction-band-resonant nitrogen-induced levels in GaAs1−x N x with x<0.03. Phys. Rev. B 64 121301. This work showed that E + and E * converged to the same energy value. However, using nitrogen concentration as the x-axis opens a gap of 50 meV and removes this coincidence
62. A. Mascarenhas, M.J. Seong, S. Yoon, J.C. Verley, J.F. Geisz and M.C. Hanna (2003) Evolution of electronic states in GaAs1−x N x probed by resonant Raman spectroscopy. Phys. Rev. B 68 233201.
63. R. Trommer and M. Cardona (1978) Resonant Raman scattering in GaAs. Phys. Rev. B 17 1865.
64. M.J. Seong, A. Mascarenhas and J.F. Geisz (2001) T-L-X mixed symmetry of nitrogen-induced states in GaAs1−x As x probed by resonant Raman scattering. Appl. Phys. Lett. 79 1297.
65. H.M. Cheong, Y. Zhang, A. Mascarenhas and J.F. Geisz (2000) Nitrogen-induced levels in GaAs1−x N x studied with resonant Raman scattering. Phys. Rev. B 61 13687.
66. A. Mascarenhas and S. Yoon (2003) Raman Scattering in Dilute GaAsN and GaPN Alloys New York: Taylor & Francis
67. U. Tisch, E. Finkman and J. Salzman (2002) Fine structure of the E 1+Δ1, critical point in GaAsN. Phys. Rev. B 65 153204.
68. M. Kozhevnikov, V. Narayanamurti, C.V. Reddy, H.P. Xin, C.W. Tu, A. Mascarenhas and Y. Zhang (2000) Evolution of GaAs1−x N x conduction states and giant Au/GaAs1−x N x Schottky, barrier reduction studied by ballistic electron emission spectroscopy. Phys. Rev. B 61 7861.
69. I. Gorczyca, C. Skierbiszewski, T. Suski, N.E. Christensen and A. Svane (2002) Pressure and composition dependence of the electronic structure of GaAs1−x N x. Phys. Rev. B 66 081106.
70. J.-Y. Duboz, J.A. Gupta, Z.R. Wasilewski, J. Ramsey, R.L. Williams, G.C. Aers, B.J. Riel and G.I. Sproule (2002) Band-gap energy of In x Ga1−x N y As1−y. Phys. Rev. B 66 085313.
71. H.P. Hjalmarson, P. Vogl, D.J. Wolford and J.D. Dow (1980) Theory of substitutional deep traps in covalent semiconductors. Phys. Rev. Lett. 44 810.
72. J. Shen, S. Ren and J. Dow (1990) Relaxed-lattice model of isolated and paired isoelectronic traps in gap. Phys. Rev. B 42 9119.
73. S. Tixier, M. Adamcyk, T. Tiedje, S. Francoeur, A. Mascarenhas, P. Wei and F. Schiettekatte (2003) Molecular beam epitaxy growth of GaAs1−x Bi x. Appl. Phys. Lett. 82 2245.
74. K. Oe and H. Okamoto (1998) New semiconductor alloy GaAs1−x Bi x grown by metal organic vapor phase epitaxy. Jpn. J. Appl. Phys. 37 L1283.
75. A. Janotti, S.-H. Wei and S.B. Zhang (2002) Theoretical study of the effect of isovalent coalloying, of Bi and N in GaAs. Phys. Rev. B 65 115203.