Evolution of electronic states in GaAs1−xNx probed by resonant Raman spectroscopy

Physical Review B - Condensed Matter and Materials Physics

Volumn 68, Issue 23, 2003, Pages

  Mascarenhas, A ^a   Seong, M J ^a,b   Yoon, S ^a   Verley, J C ^a   Geisz, J F ^a   Hanna, M C ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b Chung Ang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; GALLIUM; NITROGEN;

ARTICLE; CONDUCTANCE; ELECTRON; PHONON; PHYSICS; RAMAN SPECTROMETRY; SEMICONDUCTOR;

EID: 84875871439     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.68.233201     Document Type: Article

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