Band-gap bowing effects in BxGa1-xAs alloys

Journal of Applied Physics

Volumn 93, Issue 5, 2003, Pages 2696-2699

  Shan, W ^a   Walukiewicz, W ^a   Wu, J ^a   Yu, K M ^a   Ager III, J W ^a   Li, S X ^b   Haller, E E ^b   Qeisz, J F ^c   Friedman, D J ^c   Kurtz, Sarah R ^c  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; HYDROSTATIC PRESSURE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM ARSENIDE; THIN FILMS;

PHOTOMODULATION SPECTROSCOPY;

TRANSITION METAL ALLOYS;

EID: 0037348051     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1540230     Document Type: Article

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