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Volumn 79, Issue 9, 2001, Pages 1297-1299

T-L-X mixed symmetry of nitrogen-induced states in GaAs1-xNx probed by resonant Raman scattering

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EID: 0040752659     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1399010     Document Type: Article
Times cited : (32)

References (23)
  • 22
    • 0040593478 scopus 로고
    • Landolt-Bomstein New Series, Group III, Springer, Berlin
    • To identify various zone-boundary phonons in this study, we have referred to the following: Semiconductors, Physics of Group IV Elements and III-V Compounds, edited by K. H. Hellwege and O. Madelung, Landolt-Bomstein New Series, Group III, Vol. 17, Pt. a (Springer, Berlin, 1982).
    • (1982) Semiconductors, Physics of Group IV Elements and III-V Compounds , vol.17 , Issue.PT. A
    • Hellwege, K.H.1    Madelung, O.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.