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Volumn 692, Issue , 2002, Pages 49-60

Electronic structure near the band gap of heavily nitrogen doped GaAs and GaP

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; ELECTRONIC STRUCTURE; ENERGY GAP; NITROGEN; SEMICONDUCTOR DOPING;

EID: 0036060944     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (11)

References (37)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.