A spatially resolved retarding field energy analyzer design suitable for uniformity analysis across the surface of a semiconductor wafer

Review of Scientific Instruments

Volumn 85, Issue 4, 2014, Pages

  Sharma, S ^a,b   Gahan, D ^a   Kechkar, S ^b   Daniels, S ^b   Hopkins, M B ^a  

^a Woodford Business Park   (Ireland)

^b DUBLIN CITY UNIVERSITY   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; IONS; PLASMA APPLICATIONS;

CAPACITIVELY COUPLED PLASMA REACTORS; ELECTRODE STRUCTURE; ION ENERGY DISTRIBUTIONS; MANUFACTURING TOLERANCES; SEMI-CONDUCTOR WAFER; SPATIAL NONUNIFORMITY; SPATIAL UNIFORMITY; SPATIALLY RESOLVED;

SILICON WAFERS;

EID: 85042897203     PISSN: 00346748     EISSN: 10897623     Source Type: Journal    
DOI: 10.1063/1.4870900     Document Type: Article

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