Spatial characterization of wafer state using principal component analysis of optical emission spectra in plasma etch

IEEE Transactions on Semiconductor Manufacturing

Volumn 10, Issue 1, 1997, Pages 52-61

  White, David A ^b,c   Boning, Duane ^a,b   Butler, Stephanie Watts ^d   Barna, Gabriel G ^d  

^a IEEE

^b Massachusetts Institute of Technology Cambridge   (United States)

^c NeuroDyne Inc   (United States)

^d TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; DATA COMPRESSION; EMISSION SPECTROSCOPY; LEAST SQUARES APPROXIMATIONS; NEURAL NETWORKS; PARAMETER ESTIMATION; PLASMA ETCHING; PROCESS CONTROL; REGRESSION ANALYSIS; SEMICONDUCTOR MATERIALS; VLSI CIRCUITS;

DIMENSIONALITY REDUCTION; METAL LINE WIDTH REDUCTION; OPTICAL EMISSION SPECTRA; PRINCIPAL COMPONENT ANALYSIS; ROOT MEAN SQUARE PREDICTION ERRORS; SPATIAL CHARACTERIZATION; WAFER STATE;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0031079201     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/66.554484     Document Type: Article

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