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Volumn 5, Issue 9, 2015, Pages 1258-1264

Pressureless Sintering of Microscale Silver Paste for 300 °C Applications

Author keywords

Die attach; high temperature; reliability; sintered Ag

Indexed keywords

DIES; GOLD; HIGH TEMPERATURE APPLICATIONS; METALLIZING; METALS; RELIABILITY; SINTERING; SUBSTRATES; THICK FILMS; THIN FILMS;

EID: 85028228472     PISSN: 21563950     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCPMT.2015.2455811     Document Type: Article
Times cited : (58)

References (17)
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    • Schwarzbauer, H.1
  • 6
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    • Thermomechanical reliability of low-temperature sintered silver die attached SiC power device assembly
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    • J. G. Bai and G.-Q. Lu, "Thermomechanical reliability of low-temperature sintered silver die attached SiC power device assembly," IEEE Trans. Device Mater. Rel., vol. 6, no. 3, pp. 436-441, Sep. 2006.
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    • Bai, J.G.1    Lu, G.-Q.2
  • 7
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    • High-temperature operation of SiC power devices by low-temperature sintered silver die-attachment
    • Aug.
    • J. Guofeng Bai, J. Yin, Z. Zhang, G.-Q. Lu, and J. D. van Wyk, "High-temperature operation of SiC power devices by low-temperature sintered silver die-attachment," IEEE Trans. Adv. Packag., vol. 30, no. 3, pp. 506-510, Aug. 2007.
    • (2007) IEEE Trans. Adv. Packag. , vol.30 , Issue.3 , pp. 506-510
    • Guofeng Bai, J.1    Yin, J.2    Zhang, Z.3    Lu, G.-Q.4    Van Wyk, J.D.5
  • 8
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    • Processing and characterization of nanosilver pastes for die-attaching SiC devices
    • Oct.
    • J. G. Bai, J. N. Calata, and G.-Q. Lu, "Processing and characterization of nanosilver pastes for die-attaching SiC devices," IEEE Trans. Electron. Packag. Manuf., vol. 30, no. 4, pp. 241-245, Oct. 2007.
    • (2007) IEEE Trans. Electron. Packag. Manuf. , vol.30 , Issue.4 , pp. 241-245
    • Bai, J.G.1    Calata, J.N.2    Lu, G.-Q.3
  • 10
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    • Simplification of the nanosilver sintering process for large-area semiconductor chip bonding: Reduction of hot-pressing temperature below 200°C
    • Aug.
    • K. Xiao, J. N. Calata, H. Zheng, K. D. T. Ngo, and G.-Q. Lu, "Simplification of the nanosilver sintering process for large-area semiconductor chip bonding: Reduction of hot-pressing temperature below 200°C," IEEE Trans. Compon., Packag., Manuf. Technol., vol. 3, no. 8, pp. 1271-1278, Aug. 2013.
    • (2013) IEEE Trans. Compon., Packag., Manuf. Technol. , vol.3 , Issue.8 , pp. 1271-1278
    • Xiao, K.1    Calata, J.N.2    Zheng, H.3    Ngo, K.D.T.4    Lu, G.-Q.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.